Making nonmagnetic semiconductors ferromagnetic
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Summary
The magnetic coupling in all semiconductor ferromagnetic/nonmagnetic layered structures, together with the possibility of spin filtering in RTDs, shows the potential of the present material system for exploring new physics and for developing new functionality toward future electronics.
- Type
- article
- Published
- 1998-08-14
- Cited by
- 4,270
- References
- 26
- OpenAlex
- https://openalex.org/W1991388146
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:13501790
Keywords
Ferromagnetism, Condensed matter physics, Magnetic semiconductor, Semiconductor, Heterojunction
References
- The Hall effect and its applications
- Preparation of (In,Mn)As/(Ga,Al)Sb magnetic semiconductor heterostructures and their ferromagnetic characteristics
- Nonmetal-metal-nonmetal transition and large negative magnetoresistance in (Ga, Mn)As/GaAs
- Interplay between the magnetic and transport properties in the III-V diluted magnetic semiconductor Ga1-xMnxAs
- Resonant Spin Amplification in n-Type GaAs
- Diluted magnetic III-V semiconductors.
- REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION OSCILLATIONS DURING GROWTH OF GAAS AT LOW TEMPERATURES UNDER HIGH AS OVERPRESSURE
- (Ga, Mn)As/GaAs Diluted Magnetic Semiconductor Superlattice Structures Prepared by Molecular Beam Epitaxy
- FERROMAGNETIC ORDER INDUCED BY PHOTOGENERATED CARRIERS IN MAGNETIC III-V SEMICONDUCTOR HETEROSTRUCTURES OF (IN,MN)AS/GASB
- Epitaxy of (Ga, Mn)As, a new diluted magnetic semiconductor based on GaAs
- The s,p-d exchange interaction in GaAs heavily doped with Mn
- Observation of a Ferromagnetic Transition Induced by Two-Dimensional Hole Gas in Modulation-Doped CdMnTe Quantum Wells
- Tunneling potential barrier dependence of electron spin polarization.
- Local structures of III-V diluted magnetic semiconductors Ga 1 − x Mn x As studied using extended x-ray-absorption fine structure
- Band structures of zinc-blende-type MnAs and (MnAs)1(GaAs)1 superlattice
- Evidence of Band Conduction and Critical Scattering in Dilute Eu-Chalcogenide Alloys
- (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs
- Kondo effect in a single-electron transistor
- New diluted magnetic semiconductors based on III–V compounds
- Carrier-concentration-induced ferromagnetism in PbSnMnTe.
Cited by
- Growth and characterization of Si1−xMnx alloys on Si(100)
- Magnetic Properties of (Ga,Fe)N
- Ab Initio Study of Magnetism in III-V- and II-VI-Based Diluted Magnetic Semiconductors
- Electrical Properties and Ferromagnetism in (Ga,Cr)As
- Control of luminescence emitted by Cd1 − xMnxS nanocrystals in a glass matrix: x concentration and thermal annealing
- A one-dimensional coordination polymer exhibiting simultaneous spin-crossover and semiconductor behaviour.
- Electric-field controlled ferromagnetism in MnGe magnetic quantum dots
- Structural and optical properties of self-catalytic GaAs:Mn nanowires grown by molecular beam epitaxy on silicon substrates.
- First principles studies of GeTe based dilute magnetic semiconductors
- Properties of Multifunctional Oxide Thin Films Despostied by Ink-jet Printing
- Atomic scale electronic structure of the ferromagnetic semiconductor Cr2Ge2Te6.
- Ferromagnetism and Magnetotransport of Be-codoped GaMnAs
- Paramagnetism in single-phase Sn1−xCoxO2 dilute magnetic semiconductors
- Investigation of pressure effects on MnxGe1-x
- Spin Wave Resonances in GaMnAs
- Highly mismatched crystalline and amorphous GaN1−xAsx alloys in the whole composition range
- Redshift in Absorption Edge of Cd _1-x Co _x S Nanofilms
- MOVPE Growth of InP-based III-V compounds doped with transition metals (Fe,Mn)
- Enhanced room temperature ferromagnetism in hydrogenated Zn0.98Mn0.02O
- Schwache Lokalisierung und andere Interferenzeffekte in Ferromagneten
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