The energy gap ? of ? epitaxial layers as a function of composition and temperature
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- Type
- article
- Published
- 1997-08-01
- Cited by
- 30
- References
- 13
- OpenAlex
- https://openalex.org/W1990986895
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:95260327
Keywords
Epitaxy, Band gap, Cladding (metalworking), Molecular beam epitaxy, Ellipsometry
References
- Epitaxy of Zn1 − xMgxSeyTe1 − y on (100)InAs
- E0 band‐gap energy and lattice constant of ternary Zn1−xMgxSe as functions of composition
- Temperature dependence of the energy gap in semiconductors
- Refractive indices of ZnMgSSe alloys lattice matched to GaAs
- Temperature dependence of the energy gap of zinc‐blende CdSe and Cd1−xZnxSe epitaxial layers
- OPTICAL PROPERTIES OF ZN1-XMGXSYSE1-Y EPITAXIAL LAYERS FOR BLUE-GREEN LASER APPLICATIONS
- Characterization of Zn(1 − y)MgySxSe(1 − x) epilayers grown by low-pressure metalorganic vapour phase epitaxy
- CdTe/MgTe heterostructures: Growth by atomic layer epitaxy and determination of MgTe parameters
- The band gap of Hg1−xMgxTe grown by molecular beam epitaxy
- Wide gap Cd1-xMgxTe : molecular beam epitaxial growth and characterization
- Variation with composition of the E 0 and E 0 + Δ 0 gaps in Zn S x Se 1 − x alloys
- Epitaxial Growth of ZnMgSSe on GaAs Substrate by Molecular Beam Epitaxy
- Optical constants of ZnSxSe1−x ternary alloys
Cited by
- Structural and electronic properties of wide band gap Zn1-xMgxSe alloys
- PRESSURE DEPENDENCE OF OPTO-ELECTRONIC PROPERTIES IN ZnSxSe1-x
- The influence of magnesium on p-type doping and optoelectronic properties of Zn1−xMgxSe-based heterostructures
- Energy band gaps of Zn1−xMgxSySe1−y lattice matched to GaAs
- Electron and positron band structure and related properties in Zn1-xMgxSySe1-y lattice matched to GaAs
- MOVPE growth of MgSe and ZnMgSe on (100)GaAs
- Structural properties of MOVPE-grown ZnMgSe epilayers and ZnSe/ZnMgSe MQWs on (100) GaAs
- Effects of disorder on the optical gap of (Zn,Mg)(S,Se)
- Structure and properties of ZnSxSe1−x thin films deposited by thermal evaporation of ZnS and ZnSe powder mixtures
- ENERGY BAND-GAPS OF MgxZn1-xSe: VIOLATION OF VEGARD'S LAW
- Zinc-blende ZnS under pressure: predicted electronic properties
- Temperature dependence of energy bandgap of Zn1-xMgxSe strained epitaxial layers grown on GaAs
- Structural and electronic properties of Zn1−xMgxSySe1−y alloys
- Calculation of electronic and optical properties of Zn-based II–VI semiconductors
- Structural and optical parameters of films deposited on quartz substrates by laser ablation
- Energy band gaps and lattice parameters evaluated with the Heyd-Scuseria-Ernzerhof screened hybrid functional.
- Low pressure MOVPE growth and structural properties of ZnMgSe epilayers on (1 0 0)GaAs
- Predicted electronic properties of zinc-blende Zn1−xMgxSe alloys
- Spin-flip raman scattering of wide-band-gap ii-vi ternary alloys
- Determination of the band‐gap of MgS and MgS‐rich Zn1−xMgxSySe1−y alloys from optical transmission measurements
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