Logic Gates and Computation from Assembled Nanowire Building Blocks
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Summary
It is shown that crossed nanowire p-n junctions and junction arrays can be assembled in over 95% yield with controllable electrical characteristics, and in addition, that these junctions can be used to create integrated nanoscale field-effect transistor arrays with nanowires as both the conducting channel and gate electrode.
- Type
- article
- Published
- 2001-11-09
- Cited by
- 1,737
- References
- 23
- OpenAlex
- https://openalex.org/W1985555064
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:11476047
Keywords
Nanowire, Miniaturization, Nanotechnology, Computation, Transistor
References
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- Carbon nanotube intramolecular junctions
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- Directed assembly of one-dimensional nanostructures into functional networks.
- Electronically configurable molecular-based logic gates
- Functional nanoscale electronic devices assembled using silicon nanowire building blocks.
- Crossed nanotube junctions
- A [2]Catenane-Based Solid State Electronically Reconfigurable Switch
- Art of electronics
- Laser-Assisted Catalytic Growth of Single Crystal GaN Nanowires
- Doping and Electrical Transport in Silicon Nanowires
- Semiconductor Devices: Physics and Technology
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- Photoswitching in azobenzene self-assembled monolayers capped on zinc oxide: nanodots vs nanorods.
- Synthesis and characterization of CuO nanowires by a simple wet chemical method
- Twin-free GaAs nanosheets by selective area growth: implications for defect-free nanostructures.
- Advances in nanowire bioelectronics
- Portable glucose meter: trends in techniques and its potential application in analysis
- Composite materials based on Ag nanoparticles in situ synthesized on the vaterite porous matrices
- Photodetectors and photovoltaic devices based on semiconductor nanomaterials
- Fault Detection and Diagnosis Techniques for Molecular Computing
- Realistic limits to computation
- Croissance de nanofils de silicium et de Si/SiGe
- Reliable and high-performance architecture for nanoscale integrated systems
- First-principles study of the dependence of silicon electronic transport properties on the crystallographic growth
- Transport properties and low-frequency noise in low-dimensional structures
- Quantum transport through Ga2As2 cluster
- Atomistic simulations of the mechanical deformation and energetics of metal nanowires
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