Electromigration and the local transport field in mesoscopic systems.
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Summary
An analysis is presented for the local field and electromigration driving force in mesoscopic systems, i.e., systems in which the dimension along the transport direction is smaller than the electron mean free path due to inelastic scattering.
- Type
- article
- Published
- 1989-03-15
- Cited by
- 36
- References
- 0
- OpenAlex
- https://openalex.org/W1982414447
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:20985342
Keywords
Mesoscopic physics, Condensed matter physics, Electromigration, Scattering, Physics
References
Cited by
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- A resistance formula for coherent multi-barrier structures
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- Electron tunneling across a tunable potential barrier
- Melting of Metallic Electrodes and Their Flowing Through a Carbon Nanotube Channel within a Device
- Fabrication of metallic electrodes with nanometer separation by electromigration
- Corrections to Lodder's “exact” electromigration theory
- Theory of the Residual Resistivity Dipole Diffusion of Non-Interacting Particles Around a Fixed Point Scatterer
- Electromigration in mesoscopic systems with current concentration
- Spatial distribution of the electric current and field in atomic-scale conductors
- Comment on Lodder's “exact” electromigration theory
- Capacitance, admittance, and rectification properties of small conductors
- First-Order Quantum Corrections to the Diffusivity and Current-Induced Density Fluctuations in the Three-Dimensional Bulk
- Conductance determined by transmission: probes and quantised constriction resistance
- Electromigration in thin tunnel junctions with ferromagnetic/nonmagnetic electrodes: Nanoconstrictions, local heating, and direct and wind forces
- Nanowires sheathed inside nanotubes: Manipulation, properties and applications
- Self-flow via upwind electromigration of nanoliquid bridge
- Theory of surface electromigration on metals: application to self-electromigration on Cu(111)
- Field and potential around local scatterers in thin metal films studied by scanning tunneling potentiometry
- Reliability analysis of the low resistance state stability of Ge0.3Se0.7 based solid electrolyte nonvolatile memory cells
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