Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells
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- Type
- article
- Published
- 2010-04-12
- Cited by
- 108
- References
- 21
- Access
- Open access
- OpenAlex
- https://openalex.org/W1977452820
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:14165541
Keywords
Materials science, Optoelectronics, Quantum efficiency, Photocurrent, Indium gallium nitride
References
- Absorption and Scattering of Light by Small Particles
- Absorption enhancement due to scattering by dipoles into silicon waveguides
- Metal contacts to n-type GaN
- Light trapping properties of pyramidally textured surfaces
- Nonalloyed Ohmic Formation for p-Type AlGaN with p-Type GaN Capping Layers Using Ohmic Recessed Technique
- Island size effects in nanoparticle-enhanced photodetectors
- Improved performance of amorphous silicon solar cells via scattering from surface plasmon polaritons in nearby metallic nanoparticles
- Superior radiation resistance of In1-xGaxN alloys: Full-solar-spectrum photovoltaic material system
- Plasmonic nanoparticle enhanced light absorption in GaAs solar cells
- Design and characterization of GaN∕InGaN solar cells
- Design principles for particle plasmon enhanced solar cells
- Surface plasmon enhanced silicon solar cells
- Enhanced emission from Si-based light-emitting diodes using surface plasmons
- Growth, fabrication, and characterization of InGaN solar cells
- Plasmonic nanostructure design for efficient light coupling into solar cells.
- Improved Conversion Efficiency of GaN/InGaN Thin-Film Solar Cells
Cited by
- Photodetectors and photovoltaic devices based on semiconductor nanomaterials
- Caractérisations de matériaux et tests de composants des cellules solaires à base des nitrures des éléments III-V
- Band structure adjustment of solar cells by gradient doping
- Enhanced Photovoltaic Properties of Gradient Doping Solar Cells
- High Concentration InGaN/GaN Multi-Quantum Well Solar Cells with a Peak Open-Circuit Voltage of 2.45 V
- An investigation on InxGa1−xN/GaN multiple quantum well solar cells
- Numerical Study of InGaN based Photovoltaic by SCAPs Simulation
- Plasmonic nanoparticle networks formed using iron porphyrin molecular bridges.
- Progress in Indium Gallium Nitride Materials for Solar Photovoltaic Energy Conversion
- Preparation and properties of Ni/InGaN/GaN Schottky barrier photovoltaic cells
- Controlled plasmon resonance properties of hollow gold nanosphere aggregates.
- Photoluminescence plasmonic enhancement in InAs quantum dots coupled to gold nanoparticles
- Photoconductivity and optical properties of silicon coated by thin TiO2 film in situ doped by Au nanoparticles
- Characterization of InGaN-based Photovoltaic Devices By Varying the Indium Contents
- Enhanced conversion efficiency of InGaN multiple quantum well solar cells grown on a patterned sapphire substrate
- Nanoantennas for nanowire photovoltaics
- Barrier Thickness Dependence of Photovoltaic Characteristics of InGaN/GaN Multiple Quantum Well Solar Cells
- Surface plasmon enhanced electroluminescence of SiNx film based MIS device
- Flexible nanoporous anodic aluminum oxide(np-AAO) template coated with self-assembled Au nanocrown array for nanophotonic switching
- Surfactantless photochemical growth of Ag nanostructures on GaN epitaxial films with controlled morphologies and their application for SERS