Two color InAs/InGaAs dots-in-a-well detector with background-limited performance at 91 K

Keywords

Quantum dot, Responsivity, Detector, Black-body radiation, Physics

References

• High-responsivity, normal-incidence long-wave infrared (λ∼7.2 μm) InAs/In0.15Ga0.85As dots-in-a-well detectorS. Raghavan, P. Rotella, A. Stintz — 2002
• On the detectivity of quantum-dot infrared photodetectorsV. Ryzhii, I. Khmyrova, Vladimir Mitin — 2001
• High-detectivity, normal-incidence, mid-infrared (λ∼4 μm)InAs/GaAs quantum-dot detector operating at 150 KA.D. Stiff, Sanjay Krishna, P. Bhattacharya — 2001
• Bound-to-continuum intersubband photoconductivity of self-assembled InAs quantum dots in modulation-doped heterostructuresSeung-Woong Lee, Kazuhiko Hirakawa, Yozo Shimada — 1999
• Normal-incident intersubband photocurrent spectroscopy on InAs/GaAs quantum dotsLeiqiang Chu, A. Zrenner, G. Böhm — 1999
• Intersublevel transitions in InAs/GaAs quantum dots infrared photodetectorsS. Maimon, E. Finkman, G. Bahir — 1998
• Selective manipulation of InAs quantum dot electronic states using a lateral potential confinement layerEui‐Tae Kim, Zhonghui Chen, A. Madhukar — 2002
• Intrinsic mechanism for the poor luminescence properties of quantum-box systems.H. Benisty, C. M. Sotomayor-Torrès, Claude Weisbuch — 1991
• Characterization of InAs quantum dots in strained InxGa1-xAs quantum wellsA. Stintz, G. T. Liu, A.L. Gray — 2000
• Phonon scattering and energy relaxation in two-, one-, and zero-dimensional electron gases.U. Bockelmann, G. Bastard — 1990
• Quantum‐well infrared photodetectorsB. F. Levine — 1993
• Tailoring detection bands of InAs quantum-dot infrared photodetectors using InxGa1−xAs strain-relieving quantum wellsEui‐Tae Kim, Zhonghui Chen, A. Madhukar — 2001
• Growth and characterization of InGaAs/InGaP quantum dots for midinfrared photoconductive detectorSonghyun Kim, Hooman Mohseni, M. Erdtmann — 1998
• Midinfrared photoconductivity of Ge/Si self-assembled quantum dotsNoam Rappaport, E. Finkman, T. Brunhes — 2000
• NORMAL-INCIDENCE INTERSUBBAND (IN, GA)AS/GAAS QUANTUM DOT INFRARED PHOTODETECTORSDong Pan, E. Towe, Steve Kennerly — 1998
• Mid-infrared photoconductivity in InAs quantum dotsK.W. Berryman, S. A. Lyon, Mordechai Segev — 1997
• Physics of thin filmsL. Eckertová — 1977
• Self-assembled InAs-GaAs quantum-dot intersubband detectorsJamie Phillips, P. Bhattacharya, Stephen W. Kennerly — 1999
• Infrared Detectors and SystemsE.L. Dereniak, Glenn D. Boreman — 1996
• Quantum dot infrared photodetectorsH. C. Liu, M. Gao, J. P. McCaffrey — 2001

Cited by

• Photodetectors and photovoltaic devices based on semiconductor nanomaterialsJiang Wu — 2011
• Quantum Dot Interdiffusion For Two Colour Quantum Dot Infrared PhotodetectorsP. Kuffner — 2006
• Energy Band and Absorption Coefficient of Quantum Dots in a Well StructurePing Zhang, Xiaoling Lu, C.L. Zhang — 2012
• Two-color In0.4Ga0.6As/Al0.1Ga0.9As quantum dot infrared photodetector with double tunneling barriersJianliang Huang, Wenquan Ma, Yang Wei — 2011
• A framework for the Analysis and Evaluation of Optical Imaging Systems with Arbitrary Response FunctionsZhipeng Wang — 2008
• Normal incidence InAs/ InGaAs quantum dots-in-a-well photodetector spanning the 8-12 /spl mu/m atmospheric windowS. Raghavan, Darren Forman, P. Hill — 2003
• Tailoring of quantum dot infrared photodetector performance with AlAs/GaAs superlattice barriersAdrienne D. Stiff‐Roberts, Subhananda Chakrabarti, P. Bhattacharya — 2003
• Quantum dot optoelectronic devices: lasers, photodetectors and solar cellsJiang Wu, Siming Chen, A.J. Seeds — 2015
• Effect of overgrowth temperature on the mid-infrared response of Ge/Si(001) quantum dotsA. I. Yakimov, A. A. Bloshkin, В.А. Тимофеев — 2012
• A cross-sectional scanning tunneling microscopy study of a quantum dot infrared photodetector structureLassana Ouattara, Anders Mikkelsen, Edvin Lundgren — 2006
• An intermediate-band-assisted avalanche multiplication in InAs/InGaAs quantum dots-in-well infrared photodetectorL. Lin, Honglou Zhen, Xiaohao Zhou — 2011
• Theoretical modeling and experimental characterization of InAs∕InGaAs quantum dots in a well detectorA. Amtout, S. Raghavan, P. Rotella — 2004
• Midinfrared photoresponse of Ge quantum dots on a strained Si0.65Ge0.35 layerA. I. Yakimov, А. И. Никифоров, В.А. Тимофеев — 2011
• High-performance, long-wave (∼10.2 μm) InGaAs/GaAs quantum dot infrared photodetector with quaternary In0.21Al0.21Ga0.58As cappingSubhananda Chakrabarti, Sourav Adhikary, N. C. Halder — 2011
• Bias mediated tuning of the detection wavelength in asymmetrical quantum dots-in-a-well infrared photodetectorsLinda Höglund, P. O. Holtz, Håkan Pettersson — 2008
• Analyzing spectral sensors with highly overlapping bandsZhipeng Wang, Biliana Paskalova, Majeed M. Hayat — 2006
• Ultrafast carrier dynamics in an InAs/InGaAs quantum dots-in-a-well heterostructure.Rohit P. Prasankumar, R. S. Attaluri, Richard D. Averitt — 2008
• Ultrafast Carrier Dynamics in an InAs/InGaAs Quantum-Dots-in-a-Well PhotodetectorRohit P. Prasankumar, R. S. Attaluri, Richard D. Averitt — 2007
• Forward bias voltage controlled infrared photodetection and electroluminescence from a p-i-n quantum dot structureKai Cui, Wenquan Ma, Yanhua Zhang — 2011
• Progress in Infrared Photodetectors Since 2000Chandler Downs, Thomas E. Vandervelde — 2013

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