A self-consistent iterative scheme for one-dimensional steady state transistor calculations
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- Type
- article
- Published
- 1964-10-01
- Cited by
- 1,150
- References
- 16
- OpenAlex
- https://openalex.org/W1973728196
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:109118953
Keywords
Common emitter, Convergence (economics), Boundary value problem, Iterative method, Steady state (chemistry)
References
- A Reappraisal of Certain Aspects of Transistor Theory
- Effects of modified collector boundary conditions on the basic properties of a transistor
- Conditions at a p-n junction in the presence of collected current
- The Dependence of Transistor Parameters on the Distribution of Base Layer Resistivity
- On the Variation of Junction-Transistor Current-Amplification Factor with Emitter Current
- Statistics of the Recombinations of Holes and Electrons
- Large-Signal Behavior of Junction Transistors
- Extension of the Theory of the Junction Transistor
- The theory of p-n junctions in semiconductors and p-n junction transistors
- Effects of Space-Charge Layer Widening in Junction Transistors
- Structure-Determined Gain-Band Product of Junction Triode Transistors
- Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics
- Design theory of junction transistors
- A theory of transistor cutoff frequency (fT) falloff at high current densities
- Maximum rapidly-switchable power density in junction triodes
- Electron-Hole Recombination in Germanium
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- Mathematical modeling and numerical simulation of innovative electronic nanostructures
- Modelisation d'un propulseur a plasma stationnaire pour satellites
- Développement et analyse de schémas volumes finis motivés par la présentation de comportements asymptotiques. Application à des modèles issus de la physique et de la biologie
- Performance Optimization of Organic Solar Cells by Simulation and Characterization
- Light management in thin-film silicon solar cells
- Numerical analysis of transfer processes in semiconducting devices and structures. 1. General principles of constructing solutions of the fundamental system of equations
- Pseudo arc-length continuation method for multiple solutions in one-dimensional steady state semiconductor device simulation
- Mathematical and Numerical Modelling of Heterostructure Semiconductor Devices: From Theory to Programming
- Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells
- Simulation of multigate SOI transistors with silicon, germanium and III-V channels
- GaN heterojunction FET device Fabrication, Characterization and Modeling
- Status of HgCdTe photodiodes at the Military University of Technology
- A Fermi-Dirac Statistics Based Quantum Energy Transport Model for High Mobility MOSFETs
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