Design and realization of high-power DFB lasers
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- Type
- article
- Published
- 2004-12-20
- Cited by
- 67
- References
- 19
- OpenAlex
- https://openalex.org/W1972659067
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:108496856
Keywords
Materials science, Laser, Laser linewidth, Optoelectronics, Semiconductor laser theory
References
- A distributed feedback diode laser and its application as Raman light source
- High-power ridge-waveguide distributed-feedback lasers emitting at 860 nm
- High-power InGaAs-GaAs-AlGaAs distributed feedback lasers with nonabsorbing mirrors
- Oxygen sensing using single frequency GaAs-AlGaAs DFB laser diodes and VCSELs
- High-power 783 nm distributed-feedback laser
- Operation of 780 nm AlGaAs Distributed Feedback Lasers at 100°C with Low-Loss Waveguide Structure
- Second- and higher-order resonant gratings with gain or loss-Part 1: Green's function analysis
- High-power singlemode AlGaAs distributed Bragg reflector laser diodes operating at 856 nm
- Calculation of combined lateral and longitudinal spatial hole burning in lambda /4 shifted DFB lasers
- High-power tensile-strained GaAsP-AlGaAs quantum-well lasers emitting between 715 and 790 nm
- Green's function based simulation of the optical spectrum of multisection lasers
- The HITRAN molecular spectroscopic database: edition of 2000 including updates through 2001
- Single-mode distributed-feedback 761-nm GaAs-AlGaAs quantum-well laser
- High-Power Single Longitudinal Mode Operation of Distributed Feedback Laser Diodes with a Decoupled Confinement Heterostructure
Cited by
- Etude du confinement optique dans les lasers à cascade quantique et applications à la détection
- High-power 980-nm DFB diode lasers with a small vertical farfield divergence
- Reliable operation of 785 nm DFB diode lasers for rapid Raman spectroscopy
- Tunable 975 nm nanosecond diode-laser-based master-oscillator power-amplifier system with 16.3 W peak power and narrow spectral linewidth below 10 pm.
- Optimization of 780 nm DFB diode lasers for high-power narrow linewidth emission
- 10W continuous-wave monolithically integrated master-oscillator power-amplifier
- Wavelength stabilized 785 nm DBR-ridge waveguide lasers with an output power of up to 215 mW
- Rapid shifted excitation Raman difference spectroscopy with a distributed feedback diode laser emitting at 785 nm
- Monolithic DFB laser diodes emitting at 785 nm for in situ SER spectroscopy
- Theoretical analysis of emission characteristics of second-order distributed feedback semiconductor lasers
- Low noise control and wavelength shift of high-power DFB laser
- High-power 894 nm monolithic distributed-feedback laser.
- Distributed feedback lasers in the 760 to 810 nm range and epitaxial grating design
- 973 nm wavelength stabilized hybrid ns-MOPA diode laser system with 15.5 W peak power and a spectral line width below 10 pm
- High power monolithic two mode DFB laser diodes for the generation of terahertz radiation
- Dynamics of high power gain switched DFB RW laser under high current pulse excitation on a nanosecond time scale
- Efficiency-optimized monolithic frequency stabilization of high-power diode lasers
- Integrated 1060nm MOPA pump source for high-power green light emitters in display technology
- Compact ps-pulse laser source with free adjustable repetition rate and nJ pulse energy on microbench
- Measurement and Simulation of Distributed-Feedback Tapered Master-Oscillator Power Amplifiers
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