Computational Aspects of VLSI Design with an Emphasis on Semiconductor Device Simulation.
Explore this paper's citation graph
Summary
Spatial-temporal structure of solutions of the semiconductor device problem by P. A. Markowich and C. Ringhofer.
- Type
- article
- Published
- 1994-01-01
- Cited by
- 9
- References
- 1
- OpenAlex
- https://openalex.org/W1970691216
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:120999512
Keywords
Emphasis (telecommunications), Very-large-scale integration, Semiconductor device, Mathematics, Semiconductor
References
No references recorded for this paper.
Cited by
- the quantized blowup mechanism
- Convergence of a finite element method for the drift-diffusion semiconductor device equations
- Modeling and Analysis of Laser-Beam-Induced Current Images in Semiconductors
- Mathematical advances and horizons for classical and quantum-perturbed drift-diffusion systems: solid state devices and beyond
- Minitrack on computer design: a new grand challenge
- Semiconductor Models : Their Mathematical Study and Approximation
- Partial Differential Equations
- Partial Differential Equations
- Modeling and Analysis for Laser Beam Induced Current Images in Modeling and Analysis for Laser Beam Induced Current Images in Semiconductors Semiconductors
Related papers
- Adaptive time-domain pre-emphasis technique for multi-gigabit VLSI systems
- Mechanism of Semiconductor Opening Switch
- A summary review of displacement damage from high energy radiation in semiconductors and semiconductor devices
- Application of glow discharge optical emission spectroscopy to study semiconductors and semiconductor devices
- The Destruction Effects of Semiconductors by High Power Electromagnetic Wave
- 4335392 Semiconductor device with at least two semiconductor elements
- Criteria for identifying radiation resistant semiconductor materials
- Nuclear Reactions in Semiconductors