Separation of hot-electron and self-heating effects in two-dimensional AlGaN/GaN-based conducting channels

Keywords

Joule heating, Materials science, Heterojunction, Electric field, Sapphire

References

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Cited by

• Numerical study of electro-thermal effects in silicon devicesNghiem Thi, Thu Trang — 2013
• Design and development of radiation-resistant and low-noise semiconductor transistors for applications in high frequency communication systemsSerhiy Danylyuk — 2004
• Highly sensitive micro-Hall devices based on Al0.12In0.88Sb∕InSb heterostructuresVas. P. Kunets, William T. Black, Yu. I. Mazur — 2005
• Decay of zone-center phonons in GaN with A1, E1, and E2 symmetriesD. Y. Song, S. A. Nikishin, M. Holtz — 2007
• The Electric Field and Temperature Dependence of Conductance of Two-Dimensional Electron Gas in AlGaN/AlN/GaNL. Ardaravičius, O. Kiprijanovič, J. Liberis — 2008
• Noise spectroscopy of AlGaN/GaN HEMT structures with long channelsS. А. Vitusevich, M. V. Petrychuk, A. M. Kurakin — 2009
• QUASI-BALLISTIC AND OVERSHOOT TRANSPORT IN GROUP III-NITRIDESK. W. Kim, V. A. Kochelap, V. N. Sokolov — 2004
• Degradation Mechanisms for GaN and GaAs High Speed TransistorsDavid Cheney, E Douglas, Lu Liu — 2012
• Terahertz generation in submicron GaN diodes within the limited space-charge accumulation regimeV. N. Sokolov, K. W. Kim, V. A. Kochelap — 2005
• ELECTRIC FIELD STRENGTH AND TEMPERATURE DEPENDENCE OF CONDUCTION RELAXATION IN AlGaN/AlN/GaN 2D ELECTRON GASL. Ardaravičius, O. Kiprijanovič, J. Liberis — 2009
• Electron transport in bulk GaN under ultrashort high-electric field transientV. V. Korotyeyev, V. A. Kochelap, K. W. Kim — 2011
• TRANSPORT AND NOISE FEATURES IN AlGaN/GaN FIELD EFFECT TRANSISTOR WITH NANOMETER-SCALING GATE LENGTHS. А. Vitusevich, M. V. Petrychuk, Serhiy Danylyuk — 2005
• Equilibrium and non-equilibrium 1/f noise in AlGaN/GaN TLM structuresS. А. Vitusevich, Serhiy Danylyuk, M. V. Petrychuk — 2004
• Hot-electron transport in AlGaN/GaN two-dimensional conducting channelsB. A. Danilchenko, S. E. Zelensky, E. Drok — 2004
• Origin of noise in AlGaN/GaN heterostructures in the range of 10-100 MHzS. А. Vitusevich, Serhiy Danylyuk, A. M. Kurakin — 2006
• Doped-channel micro-Hall devices: Size and geometry effectsVas. P. Kunets, Yu. I. Mazur, Gregory J. Salamo — 2005
• AlGaN/GaN heterostructure field-effect transistors with multi-MgxNy/GaN buffer and Photo-CVD SiO2 gate dielectricK. H. Lee, P. C. Chang, Sue-Joan Chang — 2012
• Low-Noise Microwave Devices: AlGaN/GaN High Electron Mobility Transistors and OscillatorsS. А. Vitusevich — 2007
• Trapping effect evaluation of gateless AlGaN/GaN heterojunction field-effect transistors using transmission-line-model methodCheng-Yu Hu, Tamotsu Hashizume, Kota Ohi — 2010
• Comparative analysis of hot‐electron transport in AlGaN/GaN and AlGaN/AlN/GaN 2DEG channelsL. Ardaravičius, M. Ramonas, O. Kiprijanovič — 2005

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