Optical properties of semiconductors under hydrostatic pressure—I. Germanium

Keywords

Germanium, Hydrostatic pressure, Semiconductor, Attenuation coefficient, Pressure coefficient

References

• Conductivity, Hall Effect, and Magnetoresistance inn-Type Germanium, and Their Dependence on PressureGeorge B. Benedek, William Paul, Harvey Brooks — 1955
• New Infrared Absorption Bands in p-Type GermaniumHenry Briggs, R. C. Fletcher — 1952
• The Optical Constants of Germanium in the Infra-Red and VisibleW. H. Brattain, Henry Briggs — 1949
• Speculations on the Energy Band Structure of Ge—Si AlloysFrank Herman — 1954
• Conduction Band Structure of Germanium-Silicon AlloysMaurice Glicksman, Schuyler M. Christian — 1956
• Infrared Absorption of Germanium near the Lattice EdgeG. G. Macfarlane, V. Roberts — 1955
• Deformation Potentials and Mobilities in Non-Polar CrystalsJ. Bardeen, W. Shockley — 1950
• Pressure Dependence of the Resistivity of GermaniumWilliam Paul, Harvey Brooks — 1954
• The physics of high pressureP. W. Bridgman — 1931
• Photoconductivity Conference1955

Cited by

• Optical properties of semiconductors under hydrostatic pressure—III: Germanium-silicon alloysWilliam Paul, D. M. Warschauer — 1958
• Photo-piezoelectric effect in semiconductorsJ. Tauc, M. Závětovà — 1959
• Pressure Coefficient of the Band Gap in Mg2Si, Mg2Ge, and Mg2SnA. Stella, A. D. Brothers, R.H. Hopkins — 1967
• Influence de la pression sur la conductivité électrique des solidesAndré Lacam, Michel Lallemand — 1964
• Simultaneous stress and defect luminescence study on siliconPaul Gundel, Martin C. Schubert, Wilhelm Warta — 2010
• Band Structure of the Intermetallic Semiconductors from Pressure ExperimentsWilliam Paul — 1961
• Band Structure of Gallium Phosphide from Optical Experiments at High PressureR. Zallen, William Paul — 1964
• The effect of pressure on the optical-absorption edge in SnS2 and SnSe2M. J. Powell, Andrew J. Grant — 1977
• HIGH TEMPERATURE ELASTIC ANOMALY IN GERMANIUMGuy Mayer — 1991
• The effect of pressure on the optical properties of 2H and 4H SnS2M. J. Powell — 1977
• Optical properties of semiconductors under hydrostatic pressure—II. Silicon☆William Paul, D. M. Warschauer — 1958
• Determination of the Pressure Dependence of Band-Structure Parameters by Two-Photon SpectroscopyK. Reimann, M. Haselhoff, St. Rübenacke — 1996
• The effect of pressure on the optical absorption edge in (Ga0.3In0.7)2Se3M. Kranjčec, D. Desnica, B. Čelustka — 1993
• The pressure coefficient of the indirect optical energy gap of germaniumN.J. Trappeniers, R. Vetter, J. Andreä — 1967
• Approach to the physical origin of breakdown in silicon solar cells by optical spectroscopyPaul Gundel, Wolfram Kwapil, Martin C. Schubert — 2010
• Influence de la pression sur quelques propriétés des semiconducteursJean Robin — 1960
• Dielectric constant of germanium and silicon as a function of volumeM. Cardona, William Paul, Harvey Brooks — 1959
• Pressure dependence of the direct energy gap in germaniumManuel Cakdona, William Paul — 1960
• Pressure tuning of picosecond pulse transmission in germanium (A)H. M. van Driel, J. S. Bessey, R. C. Hanson — 1976
• High-resolution measurement of the germanium absorption edge under pressureN.J. Trappeniers, R. Vetter — 1972

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