Fabrication and Thermal Budget Considerations of Advanced Ge and InP SOLES Substrates
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- Type
- article
- Published
- 2015-05-01
- Cited by
- 9
- References
- 33
- Access
- Open access
- OpenAlex
- https://openalex.org/W1920021921
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:1584152
Keywords
Materials science, Wafer, Optoelectronics, Fabrication, Silicon on insulator
References
- SiGe-on-insulator and strained-Si-on-insulator for strained-Si CMOS and nanocrystalline-Ge waveguides
- Interface of directly bonded GaAs and InP
- Interdiffusion in alloys of the GaInAsP system
- Diffusion parameters of indium for silicon process modeling
- Thermal considerations for advanced SOI substrates designed for III-V/Si heterointegration
- Microstructural investigation of ion beam synthesised germanium nanoclusters embedded in SiO2 layers
- Thermal diffusion behavior of implanted germanium atoms in silicon dioxide film measured by high-resolution RBS
- Diffusion of indium in silicon inert and oxidizing ambients
- Improvement of InP Crystal Quality on GaAs Substrates by Thermal Cyclic Annealing
- Precipitation, ripening and chemical effects during annealing of Ge+ implanted SiO2 layers
- Elemental redistribution and Ge loss during ion-beam synthesis of Ge nanocrystals in SiO 2 films
- Diffusion of group III and V elements in SiO2
- Diffusion of ion‐implanted phosphorus within thermally grown SiO2 in O2 ambient
- Investigation on indium diffusion in silicon
- The Optical Constants of Silicon and Dry Oxygen Oxides of Silicon at 5461A
- Monolithic integration of InP-based transistors on Si substrates using MBE
- Diffusion of germanium in silica glass
- Modeling of Ge nanocluster evolution in ion-implanted SiO2 layer
- Nonlinear viscoelastic dilation of SiO2 films
- Fabrication of Silicon on Lattice-Engineered Substrate (SOLES) as a Platform for Monolithic Integration of CMOS and Optoelectronic Devices
Cited by
- Filière technologique hybride InGaAs/SiGe pour applications CMOS
- Fabrication of Si/SiO2/GaN structure by surface-activated bonding for monolithic integration of optoelectronic devices
- On the correlation of growth, structural and electrical properties of epitaxial Ge grown on Si by solid source molecular beam epitaxy
- Study of GaN-Based LEDs With Hybrid SiO2 Microsphere/Nanosphere AntiReflection Coating as a Passivation Layer by a Rapid Convection Deposition
- Performance Improvement of GaN-Based Light-Emitting Diodes With a Microhole Array, 45° Sidewalls, and a SiO2 Nanoparticle/Microsphere Passivation Layer
- Influences of Microhole Depth and SiO2 Nanoparticle/Microsphere Passivation Layer on the Performance of GaN-Based Light-Emitting Diodes
- Study of a GaN-Based Light-Emitting Diode with a Specific Hybrid Structure
- CMOS compatibility of semiconductor spin qubits
- Hybrid InGaAs/SiGe technology platform for CMOS applications
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