Rapid, low-temperature synthesis of nc-Si in high-density, non-equilibrium plasmas : enabling nanocrystallinity at very low hydrogen dilution
Explore this paper's citation graph
- Type
- article
- Published
- 2009-07-14
- Cited by
- 80
- References
- 35
- Access
- Open access
- OpenAlex
- https://openalex.org/W1564662655
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:93014958
Keywords
Silane, Analytical Chemistry (journal), Silicon, Chemical vapor deposition, Hydrogen
References
- Thermophoretic control of building units in the plasma-assisted deposition of nanostructured carbon films
- Plasma-assisted self-organized growth of uniform carbon nanocone arrays
- Deterministic plasma-aided synthesis of high-quality nanoislanded nc-SiC films
- Power transfer and mode transitions in low-frequency inductively coupled plasmas
- High-rate, low-temperature synthesis of composition controlled hydrogenated amorphous silicon carbide films in low-frequency inductively coupled plasmas
- Control of core-shell structure and elemental composition of binary quantum dots
- Hysteresis and mode transitions in a low-frequency inductively coupled plasma
- Microcrystalline silicon.. Growth and device application
- Optical emission spectroscopy investigation on very high frequency plasma and its glow discharge mechanism during the microcrystalline silicon deposition
- Deposition of nanocrystalline silicon films at room temperature
- High-speed μc-Si films deposition and large-grain poly-Si films deposition by surface wave discharge
- Structural, electrical and photovoltaic characterization of Si nanocrystals embedded SiC matrix and Si nanocrystals/c-Si heterojunction devices
- Comprehensive study of microcrystalline silicon solar cells deposited at high rate using 13.56 MHz plasma-enhanced chemical vapor deposition
- Homogeneous nanocrystalline cubic silicon carbide films prepared by inductively coupled plasma chemical vapor deposition
- Colloquium: Reactive plasmas as a versatile nanofabrication tool
- Influence of pressure and ion bombardment on the growth and properties of nanocrystalline silicon materials
- Material and solar cell research in microcrystalline silicon
- Structural analysis of undoped microcrystalline silicon thin films deposited by PECVD technique
- Charged clusters in thin film growth
- Mechanism of hydrogen-induced crystallization of amorphous silicon
Cited by
- Single-step, rapid low-temperature synthesis of Si quantum dots embedded in an amorphous SiC matrix in high-density reactive plasmas
- Controlled-bandgap silicon nitride nanomaterials : deterministic nitrogenation in high-density plasmas
- Temperature-dependent growth mechanisms of low-dimensional ZnO nanostructures
- Directional growth of nanocrystalline Si nanorod array by mid‐frequency magnetron sputtering
- Preferential 〈220〉 crystalline growth in nanocrystalline silicon films from 27.12 MHz SiH4 plasma for applications in solar cells
- Charged nanoparticles in thin film and nanostructure growth by chemical vapour deposition
- Effect of mesh bias on the properties of the lateral conductivity of intrinsic microcrystalline silicon films deposited by low-frequency inductively coupled plasma
- Relating plasma processing, surface morphology, and electronic properties of nanomaterials
- Effects of ion bombardment on microcrystalline silicon growth by inductively coupled plasma assistant magnetron sputtering
- Impact of hydrogen dilution on optical properties of intrinsic hydrogenated amorphous silicon films prepared by high density plasma chemical vapor deposition for solar cell applications
- RF power dependence of the properties of n-type nanocrystalline silicon films deposited by a low-frequency inductively coupled plasma
- Property-performance control of multidimensional, hierarchical, single-crystalline ZnO nanoarchitectures.
- Crystallization mechanism of silicon quantum dots upon thermal annealing of hydrogenated amorphous Si-rich silicon carbide films
- Highly doped p-type microcrystalline silicon thin films fabricated by a low-frequency inductively coupled plasma at a low temperature
- Density improvement of silicon nanocrystals embedded in silicon carbide matrix deposited by hot-wire CVD
- Well dispersed silicon nanospheres synthesized by RF thermal plasma treatment and their high thermal conductivity and dielectric constant in polymer nanocomposites
- Generation of Charged Nanoparticles and Their Deposition Behavior under Alternating Electric Bias during Chemical Vapor Deposition of Silicon
- Size effect on electronic transport in nC-Si/SiOx core/shell quantum dots
- Low-temperature plasma processing for Si photovoltaics
- Plasma-aided fabrication in Si-based photovoltaic applications: an overview
Related papers
- Effect of hydrogen dilution on crystalline properties of nano-crystalline silicon thin films in fast growth
- Fast growth of nanocrystalline silicon film prepared with low hydrogen flow rate by using PECVD at low-temperature
- Nanocrystalline silicon films prepared from silane plasma in RF-PECVD, using helium dilution without hydrogen: structural and optical characterization
- Impacts of hydrogen dilution on growth and optical properties of a-SiC : H films
- Structure of Si:H Films Fabricated by Plasma-Enhanced Cvd using Hydrogen Diluted Plasma
- The effect of hydrogen on in nano-crystalline thin films prepared at with low temperature and high pressure and fast growth
- Structural and optical properties of a-Si:H/nc-Si:H thin films grown from Ar–H2–SiH4 mixture by plasma-enhanced chemical vapor deposition
- Silicon-germanium films deposited by low-frequency plasma-enhanced chemical vapor deposition: Effect of H_2 and Ar dilution
- Investigation of the amorphous to microcrystalline phase transition of thin film prepared by electron cyclotron resonance chemical vapor deposition method
- Highly conducting phosphorous doped Nc-Si:H thin films deposited at high deposition rate by hot-wire chemical vapor deposition method.