First-principles study of the structures and electronic band properties of Bi2Te3011̄5 nanoribbons
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- Type
- article
- Published
- 2015-06-11
- Cited by
- 8
- References
- 20
- Access
- Open access
- OpenAlex
- https://openalex.org/W1504649911
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:94068325
Keywords
Ribbon, Gapless playback, Thermoelectric effect, Condensed matter physics, Band gap
References
- First-principles investigations of the atomic, electronic, and thermoelectric properties of equilibrium and strained Bi2Se3and Bi2Te3including van der Waals interactions
- Observation of a large-gap topological-insulator class with a single Dirac cone on the surface
- A topological Dirac insulator in a quantum spin Hall phase
- First-principles calculations for point defects in solids
- Projector augmented-wave method.
- Generalized Gradient Approximation Made Simple.
- Domain formation due to surface steps in topological insulator Bi2Te3 thin films grown on Si (111) by molecular beam epitaxy
- Density functional study of ternary topological insulator thin films
- Robustness of topologically protected surface states in layering of Bi2Te3 thin films.
- Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface
- Exfoliation and characterization of bismuth telluride atomic quintuples and quasi-two-dimensional crystals.
- Ultrafast surface carrier dynamics in the topological insulator Bi₂Te₃.
- First-principles studies of the three-dimensional strong topological insulators Bi2Te3, Bi2Se3 and Sb2Te3
- Facile synthesis and thermoelectric studies of n-type bismuth telluride nanorods with cathodic stripping Te electrode
- The birth of topological insulators
- Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set.
- Experimental Realization of a Three-Dimensional Topological Insulator, Bi2Te3
- Intrinsic Topological Insulator Bi2Te3 Thin Films on Si and Their Thickness Limit
- Temperature-induced coexistence of a conducting bilayer and the bulk-terminated surface of the topological insulator Bi2Te3.
- Experimental demonstration of topological surface states protected by time-reversal symmetry.
Cited by
- Substrate temperature-dependent thermoelectric figure of merit of nanocrystalline Bi2Te3 and Bi2Te2.7Se0.3 prepared using pulsed laser deposition supported by DFT study
- An anomalously high Seebeck coefficient and power factor in ultrathin Bi2Te3 film: Spin–orbit interaction
- Photo- and Nanoelectronics Based on Two-Dimensional Materials. Part I. Two-Dimensional Materials: Properties and Synthesis
- Nano-precipitation and carrier optimization synergistically yielding high-performance n-type Bi2Te3 thermoelectrics
- Eliciting High‐Performance Thermoelectric Materials via Phase Diagram Engineering: A Review
- Exfoliated Bi2Te3 nanoparticle suspensions and films: morphological and nonlinear optical characterization
- Topologically-Enhanced Thermoelectric Properties in Bi2Te3-Based Compounds: Effects of Grain Size and Misorientation.
- Lattice Plainification and Intercalation Advances Power Generation and Thermoelectric Cooling in n‐type Bi2(Te, Se)3
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