Defect Mediated Sub-Bandgap Optical Absorption in Ion-Implanted Silicon Nano-Wire Waveguide Photodetectors
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- Type
- article
- Published
- 2015-01-01
- Cited by
- 1
- References
- 84
- Access
- Open access
- OpenAlex
- https://openalex.org/W99576980
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:107620251
Keywords
Photodetector, Materials science, Optoelectronics, Silicon, Absorption (acoustics)
References
- Ultra-low power parametric frequency conversion in a silicon microring resonator.
- Lattice Vacancies and Interstitials in Silicon
- Silicon Photonics: All-Optical Devices for Linear and Nonlinear Applications
- Deep impurities in semiconductors
- Silicon waveguide-integrated optical power monitor with enhanced sensitivity at 1550nm
- Monitoring and Tuning Micro-Ring Properties Using Defect-Enhanced Silicon Photodiodes at 1550 nm
- Silicon waveguide infrared photodiodes with >35 GHz bandwidth and phototransistors with 50 AW-1 response.
- Demonstration of electrooptic modulation at 2165nm using a silicon Mach-Zehnder interferometer.
- Recent Progress in Silicon Photonics: A Review
- Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon
- Mid-infrared photonics in silicon and germanium
- Self-phase modulation and nonlinear loss in silicon nanophotonic wires near the mid-infrared two-photon absorption edge.
- Locally oxidized silicon surface-plasmon Schottky detector for telecom regime.
- Lattice location and dopant behavior of group II and VI elements implanted in silicon
- Mid-infrared to telecom-band supercontinuum generation in highly nonlinear silicon-on-insulator wire waveguides.
- High Miller index channeling in silicon substrates
- Surface-plasmon Schottky contact detector based on a symmetric metal stripe in silicon.
- Silicon-on-insulator spectrometers with integrated GaInAsSb photodiodes for wide-band spectroscopy from 1510 to 2300 nm.
- High‐dose phenomena in zinc‐implanted silicon crystals
- Algorithm for the determination of intrinsic optical constants of metal films: application to aluminum.
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