Monolayer MoS2 on a substrate of hexagonal boron nitride
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- Type
- dissertation
- Published
- 2014-01-01
- Cited by
- 0
- References
- 23
- OpenAlex
- https://openalex.org/W87924177
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:55877832
Keywords
Monolayer, Molybdenum disulfide, Band gap, Electronic band structure, Molybdenum
References
- Optoelectronic properties in monolayers of hybridized graphene and hexagonal boron nitride.
- Self-consistent electronic structure of Si, Ge and diamond by the LMTO-ASA method
- A and V
- Ultraviolet and infrared spectra of cubic boron nitride
- Atomically thin MoS₂: a new direct-gap semiconductor.
- Tight-binding model and direct-gap/indirect-gap transition in single-layer and multilayer MoS 2
- Nobel Lecture: Electronic structure of matter-wave functions and density functionals
- VESTA 3 for three-dimensional visualization of crystal, volumetric and morphology data
- Ab initio molecular dynamics for liquid metals.
- Quasiparticle band structure of bulk hexagonal boron nitride and related systems.
- Metal-semiconductor-metal neutron detectors based on hexagonal boron nitride epitaxial layers
- Graphene: Status and Prospects
- Calculation of ground-state and optical properties of boron nitrides in the hexagonal, cubic, and wurtzite structures.
- Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set.
- Valley-selective circular dichroism of monolayer molybdenum disulphide
- Introduction to Solid State Physics
- Review Graphite
- Solid State Physics
- Introduction to Solid State Physics
- First Principle Band Structure Calculations of Zinc-Blende BN and GaN Compounds
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