Influence of potential fluctuations on photoconductivity in a-Si : H

K. Shimakawa · Journal of Materials Science Materials in Electronics · 2003

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Type: article
Published: 2003-10-01
Cited by: 2
References: 12
DOI: https://doi.org/10.1023/a:1026122919359
OpenAlex: https://openalex.org/W70368063
Semantic Scholar: https://api.semanticscholar.org/CorpusID:134915524

Keywords

Amorphous silicon, Materials science, Range (aeronautics), Dielectric, Atmospheric temperature range

References

Photoelectronic Properties of SemiconductorsRichard H. Bube — 1992
Electronic Transport in Hydrogenated Amorphous SemiconductorsH. Overhof, P. Thomas — 1989
ac photoconductivity of hydrogenated amorphous silicon: Influence of long-range potential fluctuationsK. Shimakawa, Ashtosh Ganjoo — 2002
The temperature dependence of the photoconductivity of n-type a-Si:H and the effect of staebler-wronski defectsA. Vomvas, H. Fritzsche — 1987
Reversible conductivity changes in discharge‐produced amorphous SiD. L. Staebler, C. R. Wroński — 1977
Potential fluctuations due to inhomogeneity in hydrogenated amorphous silicon and the resulting charged dangling-bond defects.Howard M. Branz, Marvin Silver — 1990
On the non-exponential photocurrent decay in hydrogenated amorphous siliconK. Shimakawa — 1996
Potential fluctuations in amorphous siliconS. D. Baranovskiǐ, F. Hensel, K. Ruckes — 1995
AC loss originating from mesoscopic and macroscopic inhomogeneities in hydrogenated amorphous siliconK. Shimakawa, Akihiro Kondo, Masahiro Goto — 1996
Physics of Amorphous SemiconductorsKazuo Morigaki — 1999
Photoconductivity of hydrogenated amorphous silicon: influence of potential fluctuationsK. Shimakawa — 2002

Cited by

Influence of heterogeneities on the electronic properties of hydrogenated amorphous siliconS. C. Agarwal — 2014
Photoconductivity of a-Si:H and a-Ge:H: influence of potential fluctuationsK. Shimakawa, Koki Ando, Takeshi Aoki — 2004

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