All-Solid-State Synaptic Transistors with High-Temperature Stability Using Proton Pump Gating of Strongly Correlated Materials.
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Summary
All-solid-state three-terminal artificial synapses are reported that exploit proton-doped metal-insulator transition in a correlated oxide NdNiO3 (NNO) channel by proton (H+) injection/extraction in response to gate voltage, showing synaptic characteristics such as long-term potentiation and depression.
- Type
- article
- Published
- 2019-04-10
- Cited by
- 55
- References
- 35
- OpenAlex
- https://openalex.org/W30968690
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:106411011
Keywords
Humanities, Philosophy
References
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- Colossal resistance switching and band gap modulation in a perovskite nickelate by electron doping
- A million spiking-neuron integrated circuit with a scalable communication network and interface
- High-temperature operating non-volatile memory of printable single-wall carbon nanotubes self-assembled with a conjugate block copolymer.
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Cited by
- Low-voltage, CMOS-free synaptic memory based on LiXTiO2 redox transistors.
- Artificial synaptic transistor with solution processed InOx channel and AlOx solid electrolyte gate
- Accelerated Hydrogen Diffusion and Surface Exchange by Domain Boundaries in Epitaxial VO2 Thin Films.
- Perovskite neural trees
- In vivo glutamate sensing inside the mouse brain with perovskite nickelate-nafion heterostructures.
- A synaptic transistor with NdNiO3
- Synaptic Iontronic Devices for Brain-Mimicking Functions: Fundamentals and Applications.
- Ion‐Gated Transistor: An Enabler for Sensing and Computing Integration
- Solution-processed electronics for artificial synapses.
- Catalytic Hydrogen Doping of NdNiO3 Thin Films under Electric Fields.
- Deep Proton Insertion Assisted by Oxygen Vacancies for Long‐Term Memory in VO2 Synaptic Transistor
- Anisotropic ionic transport-controlled synaptic weight update by protonation in a VO2 transistor
- Electrochromic Properties of Perovskite NdNiO3 Thin Films for Smart Windows
- Memristive Devices with Multiple Resistance States Based on the Migration of Protons in α‐MoO3/SrCoO2.5 Stacks
- Perovskite Nickelate Actuators
- Recent Advances in Flexible Organic Synaptic Transistors
- Electrolyte-gated neuromorphic transistors for brain-like dynamic computing
- Monolayer MoS2 Synaptic Transistors for High-Temperature Neuromorphic Applications.
- Quantum nickelate platform for future multidisciplinary research
- Electron Doping-Induced Metal–Insulator Transition in LaNiO3 and Memory Devices
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