Investigation of indium-rich InGaN alloys and kinetic growth regime of GaN
Explore this paper's citation graph
- Type
- article
- Published
- 2013-01-01
- Cited by
- 5
- References
- 173
- Access
- Open access
- OpenAlex
- https://openalex.org/W27340325
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:133967254
Keywords
Indium, Gallium nitride, Materials science, Diode, Optoelectronics
References
- Application de la microscopie à sonde locale à l'étude de la surface de GaN(0001)
- Properties of advanced semiconductor materials : GaN, AlN, InN, BN, SiC, SiGe
- The band-gap bowing of AlxGa1−xN alloys
- Small band gap bowing in In1−xGaxN alloys
- Composition mapping in InGaN by scanning transmission electron microscopy.
- Growth regimes during homoepitaxial growth of GaN by ammonia molecular beam epitaxy
- Emergence of regular meandered step structure in simulated growth of GaN(0001) surface
- The growth of crystals and the equilibrium structure of their surfaces
- Formation of metallic in in InGaN/GaN multiquantum wells
- Anisotropic Step-Flow Growth and Island Growth of GaN(0001) by Molecular Beam Epitaxy
- Ehrlich-Schwoebel instability in molecular-beam epitaxy: A minimal model.
- Critical effects of substrate terraces and steps morphology on the growth mode of epitaxial SrRuO3 films
- Surface transition induced island formation on thin strained InGaN layers on GaN (0001) in metal-organic vapour phase epitaxy
- Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure
- Effects of Growth Temperature and Postgrowth Annealing on Inhomogeneous Luminescence Characteristics of Green-Emitting InGaN Films
- Substrates for gallium nitride epitaxy
- High doping level in Mg-doped GaN layers grown at low temperature
- RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys
- Ga adsorption and desorption kinetics on M-plane GaN
- Effect of growth interrupt and growth rate on MOVPE-grown InGaN/GaN MQW structures
Cited by
- Optimization of NH₃-MBE grown p-doped (Al)GaN layers and their implementation in long wavelength laser diodes and tunnel junctions
- The relation between photoluminescence properties and gas pressure with [0001] InGaN single quantum well systems
- High-Density Excitonic Effects in GaN: Mott-Transition and Polariton Lasing
- Unusual step meandering due to Ehrlich-Schwoebel barrier in GaN epitaxy on the N-polar surface
- Effects of Miscut on Step Instabilities in Homo-Epitaxially Grown GaN
Related papers
- Optical and electrical characterization of high-brightness blue InGaN/AlGaN/GaN LEDs
- Extremely low-resistivity and high-carrier-concentration Si-doped AlGaN with low AlN molar fraction for improvement of wall plug efficiency of nitride-based LED
- Recent progress In InGaN/GaN blue diode lasers grown on 6H-SiC substrates
- Molecular beam epitaxy growth of indium nitride and indium gallium nitride materials for photovoltaic applications
- Progress in MOVPE-growth of InGaN and InN