Giant magnetoresistance in zigzag MoS2 nanoribbons.
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Summary
The results indicate that the giant magnetoresistance effect in the zigzag MoS2 nanoribbons remains robust to the change in the ribbon widths and lengths.
- Type
- article
- Published
- 2015-04-01
- Cited by
- 9
- References
- 46
- OpenAlex
- https://openalex.org/W25785819
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:8366006
Keywords
Computer science
References
- Role of symmetry in the transport properties of graphene nanoribbons under bias.
- Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices
- Magnetic properties of MoS 2 : Existence of ferromagnetism
- Integrated circuits based on bilayer MoS₂ transistors.
- Negative differential resistance and effect of defects and deformations in MoS2 armchair nanoribbon metal-oxide-semiconductor field effect transistor
- Single-layer MoS2 phototransistors.
- Rigid-layer lattice vibrations and van der waals bonding in hexagonal MoS2
- Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials
- Generalized Gradient Approximation Made Simple.
- Density-functional method for nonequilibrium electron transport
- Ab initio modeling of quantum transport properties of molecular electronic devices
- Small-signal amplifier based on single-layer MoS2
- A density functional study of strong local magnetism creation on MoS2 nanoribbon by sulfur vacancy.
- Photoluminescence from chemically exfoliated MoS2.
- Prediction of very large values of magnetoresistance in a graphene nanoribbon device.
- Hydrogenation-induced edge magnetization in armchair MoS2 nanoribbon and electric field effects
- MoS2 nanoribbons: high stability and unusual electronic and magnetic properties.
- Mechanical and Electronic Properties of MoS2 Nanoribbons and Their Defects
- Room-temperature giant magnetoresistance over one billion percent in a bare graphene nanoribbon device
- Plasmonic enhancement of photocurrent in MoS2 field-effect-transistor
Cited by
- The indirect–direct band gap tuning in armchair MoS2 nanoribbon by edge passivation
- Multiple thermal spin transport performances of graphene nanoribbon heterojuction co-doped with Nitrogen and Boron
- Transition-metal doping induces the transition of electronic and magnetic properties in armchair MoS2 nanoribbons.
- Transient SHG Imaging on Ultrafast Carrier Dynamics of MoS2 Nanosheets
- Spin transport properties in zigzag silicon carbide nanoribbon nanojunctions by asymmetric hydrogenation and BN doping
- Tunable spin-photovoltaic effect in zigzag MoS2 nanoribbons
- Modulation of electronic and optical properties of line defected armchair MoS2 nanoribbon by vacancy passivation
- Spin Transport Properties of zCrXY (X, Y = S,Se) Nanoribbons: Implications for Spintronics
- Spin Gaps in Transition Metal Dichalcogenide Nanoribbons with Atomic Adsorbates
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