Gate-tunable phase transitions in thin flakes of 1T-TaS2.

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Summary

An ionic field-effect transistor (termed an iFET), in which gate-controlled Li ion intercalation modulates the material properties of layered crystals of 1T-TaS2, opens up possibilities in searching for novel states of matter in the extreme charge-carrier-concentration limit.

Type
article
Published
2014-07-13
Cited by
668
References
53
Access
Open access

Keywords

Subversion, Computer science, Code (set theory), Computer security, Operating system

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