Gate-tunable phase transitions in thin flakes of 1T-TaS2.
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Summary
An ionic field-effect transistor (termed an iFET), in which gate-controlled Li ion intercalation modulates the material properties of layered crystals of 1T-TaS2, opens up possibilities in searching for novel states of matter in the extreme charge-carrier-concentration limit.
- Type
- article
- Published
- 2014-07-13
- Cited by
- 668
- References
- 53
- Access
- Open access
- OpenAlex
- https://openalex.org/W25622230
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:6601468
Keywords
Subversion, Computer science, Code (set theory), Computer security, Operating system
References
- Ultrafast Switching to a Stable Hidden Quantum State in an Electronic Crystal
- Electric field gating with ionic liquids
- Electric field effect in correlated oxide systems
- Clocking the melting transition of charge and lattice order in 1T-TaS2 with ultrafast extreme-ultraviolet angle-resolved photoemission spectroscopy.
- Generalized Gradient Approximation Made Simple.
- CHARGE DENSITY WAVES IN THE LAYERED TRANSITION METAL DICHALCOGENIDES
- Scanning tunneling microscopy of the charge-density-wave structure in 1T-TaS2.
- Suppression of Metal-Insulator Transition in VO2 by Electric Field–Induced Oxygen Vacancy Formation
- Transport and optical properties of the hydrazine intercalation complexes of 1T-TaS2
- Ultrafast melting of a charge-density wave in the Mott insulator 1T-TaS2.
- X-ray crystal-structure refinement of the nearly commensurate phase of 1T-TaS2 in (3+2)-dimensional superspace
- Interplane coupling in the quasi-two-dimensional 1 T − TaS 2
- Effect of LiClO4 on the Structure and Mobility of PEO-Based Solid Polymer Electrolytes
- Electric field effect on superconducting YBa2Cu3O7−δ films
- Electric-field-induced superconductivity in an insulator.
- X-Ray Study of Charge Density Wave Structure in 1T-TaS 2
- Controlling charge-density-wave states in nano-thick crystals of 1T-TaS2
- Charge-density wave stacking order in 1 T-Ta 1-x Zr x Se 2 : Interlayer interactions and impurity (Zr) effects
- Observation of Mott localization gap using low temperature scanning tunneling spectroscopy in commensurate 1T-TaS2.
- Superconducting Dome in a Gate-Tuned Band Insulator
Cited by
- Emergence of Tertiary Dirac Points in Graphene Moiré Superlattices.
- Atomic-Scale Probing of Reversible Li Migration in 1T-V1+ xSe2 and the Interactions between Interstitial V and Li.
- A metallic mosaic phase and the origin of Mott-insulating state in 1T-TaS2
- Memristive phase switching in two-dimensional 1T-TaS2 crystals
- Zone-Folded Phonons and the Commensurate-Incommensurate Charge-Density-Wave Transition in 1T-TaSe2 Thin Films.
- Gate-tunable quantum oscillations in ambipolar Cd3As2 thin films
- Nanoscale manipulation of the Mott insulating state coupled to charge order in 1T-TaS2
- Strongly enhanced charge-density-wave order in monolayer NbSe2.
- Structure and control of charge density waves in two-dimensional 1T-TaS2
- Breakdown of compensation and persistence of nonsaturating magnetoresistance in gated WT e 2 thin flakes
- Gate-tuned superconductor-insulator transition in (Li,Fe)OHFeSe
- Tuning the charge density wave and superconductivity in 6R-TaS2−xSex
- Tunable magnetic and electrical behaviors in perovskite oxides by oxygen octahedral tilting
- Recent Advances in Two-Dimensional Materials beyond Graphene.
- Simple fabrication method for atomically-thin crystal devices with polymer passivation
- Strain tuning of the charge density wave in monolayer and bilayer 1T-TaS2.
- Controlling the metal-to-insulator relaxation of the metastable hidden quantum state in 1T-TaS2
- 2D crystals of transition metal dichalcogenide and their iontronic functionalities
- Controlling many-body states by the electric-field effect in a two-dimensional material
- Few-layer SnSe2 transistors with high on/off ratios
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