Electronic transport in natively oxidized silicon nanowires.
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Summary
Comparisons with perfectly ordered and distorted H-terminated structures reveal an unexpected interplay of effects that oxidation-induced structural distortions and electronegative Si/SiO(x) interfaces have on the conductance of B- or P-doped nanowires.
- Type
- article
- Published
- 2011-03-14
- Cited by
- 13
- References
- 48
- OpenAlex
- https://openalex.org/W21375292
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:3249631
Keywords
Willow, Visual arts, Communication, Art, Psychology
References
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- Titanium-assisted growth of silica nanowires: from surface-matched to free-standing morphologies
- Fluorination Effects on the Structural Stability and Electronic Properties of sp3-type Silicon Nanotubes
- Stability and segregation of B and P dopants in Si/SiO2 core-shell nanowires.
- First principles calculation on quantum transport of Au-Si3-Au nanoscale junction
- Surface physics of semiconducting nanowires
- Density functional simulation of chalcogen doped silicon nanowires
- Ab initio study of phosphorus donors acting as quantum bits in silicon nanowires.
- Enhanced sensing of nonpolar volatile organic compounds by silicon nanowire field effect transistors.
- High-Density Modification of H-Terminated Si(111) Surfaces Using Short-Chain Alkynes
- Preferential Positioning, Stability, and Segregation of Dopants in Hexagonal Si Nanowires.
- Enhanced field emission characteristics of SiNWs in SiNW/nc-DLC hybrid structures
- Zinc oxide nanowires for biomedical sensing and analysis