Phase transition related barrier height in Ga-Si Schottky diode

Keywords

Materials science, Mineralogy, Chemistry

References

• Epitaxial metal-semiconductor interfacesHanno H. Weitering — 1992
• The dependence of Schottky barrier potential on substrate orientation in PtSi infrared diodesP.W. Pellegrini, C. E. Ludington, M. M. Weeks — 1990
• Structure changes in gallium near its melting pointJanusz Wolny, S. Nizioł, W. Łużny — 1986
• A modified forward I‐V plot for Schottky diodes with high series resistanceH. Norde — 1979
• Constitution of Binary AlloysMax Hansen, K. Anderko, H. W. Salzberg — 1958
• The physics of semiconductor devicesH. L. Grubin — 1979
• Metal–Semiconductor ContactsE. H. Rhoderick, A. Rothwarf — 1979
• Ion beam synthesis of epitaxial silicides: fabrication, characterization and applicationsS. Mantl — 1992
• On the physics of metal-semiconductor interfacesWinfried Mönch — 1990
• Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiSi2Epitaxial StructuresR. T. Tung, J. M. Gibson, J. M. Poate — 1983

Cited by

• (7×7) reconstruction as barrier for Schottky-barrier formation at the Ga/Si(111) interfacePraveen Kumar, Mahesh Kumar, S. M. Shivaprasad — 2010
• Stability and phase transition studies of Ga–pWSe2 Schottky diode by current–voltage–temperature methodAchamma John Mathai, K.D. Patel, Ritu Srivastava — 2010
• The evaluation of the current–voltage and capacitance–voltage-frequency measurements of Yb/p-Si Schottky diodes with a high zero-bias barrier heightHavva Elif Lapa, Ç. Ş. Güçlü, Durmuş Ali Aldemir — 2020
• The response of high barrier Schottky diodes to light illuminationHavva Elif Lapa, Ali Kökçe, Durmuş Ali Aldemir — 2021

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