Band structure, phonon scattering, and the performance limit of single-walled carbon nanotube transistors.

敦小谷野 · Physical Review Letters · 2005

Summary

These measurements set the upper bound for the performance of nanotube transistors operating in the diffusive regime and are in good agreement with theoretical predictions for acoustic phonon scattering in combination with the unusual band structure ofnanotubes.

Type: article
Published: 2005-04-12
Cited by: 461
References: 35
Access: Open access
DOI: https://doi.org/10.1103/physrevlett.95.146805
arXiv: https://arxiv.org/abs/cond-mat/0504297
PubMed: https://pubmed.ncbi.nlm.nih.gov/16241684/
OpenAlex: https://openalex.org/W16241684
Semantic Scholar: https://api.semanticscholar.org/CorpusID:18653063

Keywords

Computer science

References

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Cited by

High frequency performance of individual and arrays of single-walled carbon nanotubesMaria Patarroyo, Edgard Wehbe, Hanna Mazen — 2012
Using nanoscale thermocapillary flows to create arrays of purely semiconducting single-walled carbon nanotubes.Joshua Lederberg — 2013
Ultrahigh Carrier Mobility Achieved in Photoresponsive Hybrid Perovskite Films via Coupling with Single‐Walled Carbon Nanotubesのり川津 — 2017
Investigation of mechanical and thermal properties of graphitic systemChenxi Zhang — 2014
Simulation of carbon nanotube welding through Ar bombardmentMustafa U. Küçükkal, Steven J. Stuart — 2014
Electronic Interfaces for Carbon Nanotube Electromechanical Oscillators and SensorsChristian Kauth — 2014
Controlling the diameter of aligned single-walled carbon nanotubes on quartz via catalyst reduction timeManuel Schweiger, M. Schaudig, Florentina Gannott — 2015
Assessment of Damping Mechanisms Effect on High Frequency Transmission Behavior of Metallic Single Walled Carbon NanotubesM. S. Tahvili, N. Saeedeh Jahanmiri, Mohammad Hossein Sheikhi — 2007
Carbon Nanotube Transistors: Nanotube Growth, Contact Properties and Novel DevicesJohannes Svensson — 2010
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