Interfaces between γ-Al2O3 and silicon

Keywords

Materials science, Silicon, Engineering physics, Nanotechnology, Optoelectronics

References

• Separable dual-space Gaussian pseudopotentials.Montserrat Castillo i Valero — 1995
• Band alignment between (100) Si and amorphous LaAlO3, LaScO3, and Sc2O3: Atomically abrupt versus interlayer-containing interfacesV. V. Afanas’ev, A. Stesmans, L. F. Edge — 2006
• Relativistic separable dual-space Gaussian pseudopotentials from H to RnC. Hartwigsen, Stefan Goedecker, Jürg Hutter — 1998
• Metalorganic molecular beam epitaxy of γ‐Al2O3 films on Si at low growth temperaturesKazuaki Sawada, Mákoto Ishida, Tetsurō Nakamura — 1988
• First-principles computation of material properties: the ABINIT software projectXavier Gonze, J.-M. Beuken, Razvan Caracas — 2002
• Study of ultrathin Al2O3/Si(001) interfaces by using scanning reflection electron microscopy and x-ray photoelectron spectroscopyManisha Kundu, Noriyuki Miyata, Masakazu Ichikawa — 2001
• Electronic and crystallographic structure of γ-alumina thin filmsB. Ealet, M. H. El-yakhloufi, E. Gillet — 1994
• Ab initiostudy ofγ−Al2O3surfacesHenry P. Pinto, R. M. Nieminen, Simon D. Elliott — 2004
• Electronic properties of bulk γ − Al 2 O 3Eduardo Menéndez‐Proupin, Gonzalo Gutiérrez — 2005

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• Performance and reliability improvement of 905 nm high power laser diode by design, fabrication and characterization of high damage threshold mirrorsA. Ghadimi-Mahani, Amir Reza Goodarzi, E. Farsad — 2021
• Strengthened arsenic adsorption over Ni-modified γ-Al2O3 under different operation conditions: An experimental and simulation studyPengbo Hu, Shujuan Wang, Yuqun Zhuo — 2021

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